Product Datasheet Search Results:

FLM1011-8F.pdf4 Pages, 259 KB, Original
FLM1011-8F
Sumitomo Electric Industries, Ltd.
KU BAND, GaAs, N-CHANNEL, RF POWER, JFET
FLM1011-8F.pdf4 Pages, 93 KB, Original
FLM1011-8F
Fujitsu Limited
KU BAND, GaAs, N-CHANNEL, RF POWER, JFET

Product Details Search Results:

Eudyna.com/FLM1011-8F
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"FLAT","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"GALLIUM ARSENIDE","Drain Current-Max (ID)":"2.6 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Transistor Type":"RF POWER","Channel Type":"N-CHANNEL","FET Technology":"JUNCTION","DS Breakdown Voltage-Min":"15 V","Transistor Application":"AMPLIFIER","Surface Mount":"Yes","Case Connection":"SOU...
1483 Bytes - 11:45:17, 12 February 2025
Fujitsu.com/FLM1011-8F
{"Status":"TRANSFERRED","Channel Type":"N-CHANNEL","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Mfr Package Description":"HERMETIC SEALED, METAL CERAMIC, CASE IB, 3 PIN","Terminal Form":"FLAT","Operating Mode":"DEPLETION","Package Style":"FLANGE MOUNT","Transistor Application":"AMPLIFIER","Highest Frequency Band":"KU BAND","Number of Elements":"1","Case Connection":"SOURCE","Transistor Element Material":"GALLIUM ARSENIDE","FET Technology":"JUNCTION","Terminal Position":"DUAL","Transistor Type":"...
1339 Bytes - 11:45:17, 12 February 2025

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