Product Datasheet Search Results:
- FLM1011-8F
- Sumitomo Electric Industries, Ltd.
- KU BAND, GaAs, N-CHANNEL, RF POWER, JFET
- FLM1011-8F
- Fujitsu Limited
- KU BAND, GaAs, N-CHANNEL, RF POWER, JFET
Product Details Search Results:
Eudyna.com/FLM1011-8F
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"FLAT","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"GALLIUM ARSENIDE","Drain Current-Max (ID)":"2.6 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Transistor Type":"RF POWER","Channel Type":"N-CHANNEL","FET Technology":"JUNCTION","DS Breakdown Voltage-Min":"15 V","Transistor Application":"AMPLIFIER","Surface Mount":"Yes","Case Connection":"SOU...
1483 Bytes - 11:45:17, 12 February 2025
Fujitsu.com/FLM1011-8F
{"Status":"TRANSFERRED","Channel Type":"N-CHANNEL","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Mfr Package Description":"HERMETIC SEALED, METAL CERAMIC, CASE IB, 3 PIN","Terminal Form":"FLAT","Operating Mode":"DEPLETION","Package Style":"FLANGE MOUNT","Transistor Application":"AMPLIFIER","Highest Frequency Band":"KU BAND","Number of Elements":"1","Case Connection":"SOURCE","Transistor Element Material":"GALLIUM ARSENIDE","FET Technology":"JUNCTION","Terminal Position":"DUAL","Transistor Type":"...
1339 Bytes - 11:45:17, 12 February 2025
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
File Name | File Size (MB) | Document | MOQ | Support |
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WIRING_DIAGRAM_INTERNAL_PDF_XX_FLM1000XX.pdf | 0.36 | 1 | Request | |
INSTALLATION_INSTRUCTION_FLM1000_CTI1_050.pdf | 0.33 | 1 | Request |