Product Datasheet Search Results:
4 Pages, 259 KB, Original- FLM1011-8F
- Sumitomo Electric Industries, Ltd.
- KU BAND, GaAs, N-CHANNEL, RF POWER, JFET
4 Pages, 93 KB, Original- FLM1011-8F
- Fujitsu Limited
- KU BAND, GaAs, N-CHANNEL, RF POWER, JFET
Product Details Search Results:
Eudyna.com/FLM1011-8F
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"FLAT","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"GALLIUM ARSENIDE","Drain Current-Max (ID)":"2.6 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Transistor Type":"RF POWER","Channel Type":"N-CHANNEL","FET Technology":"JUNCTION","DS Breakdown Voltage-Min":"15 V","Transistor Application":"AMPLIFIER","Surface Mount":"Yes","Case Connection":"SOU...
1483 Bytes - 03:57:26, 23 October 2024
Fujitsu.com/FLM1011-8F
{"Status":"TRANSFERRED","Channel Type":"N-CHANNEL","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Mfr Package Description":"HERMETIC SEALED, METAL CERAMIC, CASE IB, 3 PIN","Terminal Form":"FLAT","Operating Mode":"DEPLETION","Package Style":"FLANGE MOUNT","Transistor Application":"AMPLIFIER","Highest Frequency Band":"KU BAND","Number of Elements":"1","Case Connection":"SOURCE","Transistor Element Material":"GALLIUM ARSENIDE","FET Technology":"JUNCTION","Terminal Position":"DUAL","Transistor Type":"...
1339 Bytes - 03:57:26, 23 October 2024
Documentation and Support
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|---|---|---|---|---|
| 6FC5158-4BX01-8FF0.pdf | 5.65 | 1 | Request | |
| 6SE7041-8FK85-0AA0.pdf | 0.11 | 1 | Request | |
| 5TG5541-8FA.pdf | 0.21 | 1 | Request | |
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| 6AG1151-8FB01-2AB0.pdf | 7.01 | 1 | Request | |
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| 6FC5158-4BX01-8FD0.pdf | 8.13 | 1 | Request | |
| 6FC5158-5BX01-8FF0.pdf | 5.65 | 1 | Request | |
| 6ES7151-8FB00-0AB0.pdf | 10.44 | 1 | Request | |
| 2KJ3901-8F.pdf | 2.20 | 1 | Request | |
| 6ES7151-8FB01-0AB0.pdf | 10.44 | 1 | Request | |
| 6SE7041-8FK85-0AD0.pdf | 0.11 | 1 | Request |
