2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Field Effect Transistor General Description Features High density cell design for low RDS(ON). These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 400mA DC and can deliver pulsed currents up to 2A. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications. Voltage controlled small signal switch. Rugged and reliable. High saturation current capability. ___________________________________________________________________________________________ D G D G S TO-92 S 2N7000 (TO-236AB) 2N7002/NDS7002A Absolute Maximum Ratings TA = 25C unless otherwise noted <
ges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Field Effect Transistor Features Description * * * * These N-channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 400 mA DC and can deliver pulsed currents up to 2 A. These products are particularly suited for low-voltage, low-current applications, such as small servo motor control, power MOSFET gate drivers, and other switching applications. High Density Cell Design for Low RDS(ON) Voltage Controlled Small Signal Switch Rugged and Re
respond to the subsequent memory function command. All slaves that do not match the 64-bit ROM sequence will waitfor a reset pulse. This command can be used with a single or multiple devices on the bus. I 5 J!A , Typ. 8 o 8 VP0300L OR VP0106N3 OR 888110 0 2N7000 I 2N7000 Capacitor added to reduce coupling on data line due to programming signal switching 12V (10mAmin.) ~ PROGRAMMING PULSE To data connection of 081982 OS1982 Tx PRESENCE PULSE OS1982 Tx SERIAL NUMBER 6 BYTES Skip ROM [CCH] delay circuit in the OS1982. During write time slots. the delay circuit determines when the OS1982 will sample This command can save time in a single drop bus system by allowing the bus master to access the memory the data line. For a read data time slot, if a "0" is to be functions without providing the 64-bit ROM code. If more than one slave is present on the bus and a read transmitted, the delay circuit determines how long the OS1982 will hold the data line low overriding the 1 gen- command is issu
Small Signal Switch Rugged and Reliable High Saturation Current Capability D D S TO-92 1 1. Source 2. Gate 3. Drain G G SOT-23 (TO-236AB) S 2N7002/NDS7002A Ordering Information Part Number Marking Package Packing Method Min Order Qty / Immediate Pack Qty 2N7000 2N7000 TO-92 3L Bulk 10000 / 1000 2N7000-D74Z 2N7000 TO-92 3L Ammo 2000 / 2000 2N7000-D75Z 2N7000 TO-92 3L Tape and Reel 2000 / 2000 2N7000-D26Z 2N7000 TO-92 3L Tape and Reel 2000 / 2000 2N7002 702 SOT-23 3L Tape and Reel 3000 / 3000 NDS7002A 712 SOT-23 3L Tape and Reel 3000 / 3000 (c) 1998 Semiconductor Components Industries, LLC. October-2017, Rev. 3 Publication Order Number: NDS7002A/D 2N7000 / 2N7002 / NDS7002A -- N-Channel Enhancement Mode Field Effect Transistor 2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Field Effect Transistor Stresses exceeding the absolute maximum ratings may damage the device. The devic
FDP2552 FDP2570 FDP2572 APEC AP80N03S AP85L02H AP85L02J AP85L02P AP85L02S AP90N03P AP90N03S AP9926M STB85NF3LLT4 STD90NH02LT4 STD95NH02L-1 STP90NF03L STB100NH02LT4 STP80NF03L STB80NF03L-04T4 STS6NF20V STW29NK50ZD STW20NM50FD AUK STK630F IRF630FP Fairchild 2N7000BU/TA 2N7002 BS170 BS270 BUZ11 BUZ71 BUZ71A BUZ72A FCP11N60 FCPF11N60 FDB045AN08A0 FDB10AN06A0 FDB13AN06A0 FDB14AN06LA0 FDB2552 FDB2570 FDB2572 FDB3632 FDB3652 FDB3672 FDB3682 FDB4030L FDB42AN15A0 FDB5645 FDB5680 FDB5690 FDB6030BL FDB6030L FDB6035AL FDB6035L FDB603AL FDB6644 FDB6670AL FDB6676 FDB7030BL FDB7030L FDB7042L FDB7045L FDB8030L FDB8870 FDB8874 FDB8896 FDC634P FDC636P FDC638P FDC640P FDC642P 4 2N7000 2N7000 STP36NF06 STP16NF06 STP16NF06 STP16NK60Z STB60NF06LT4 STB60NF06LT4 STB40NS15T4 STB120NF10T4 STB80NF10T4 STB40NF10T4 STB35NF10T4 STB55NF06T4 STB45NF06T4 STB45NF3LLT4 STB45NF3LLT4 STB70NH03LT4 STB45NF3LLT4 ST nearest Fairchild APT APT5017BVFR Direct 2N7002 2N7000 STP20NF06L STP14NF12 STP20NM
2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Field Effect Transistor General Description Features High density cell design for low RDS(ON). These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 400mA DC and can deliver pulsed currents up to 2A. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications. Voltage controlled small signal switch. Rugged and reliable. High saturation current capability. ___________________________________________________________________________________________ D G D G S S TO-92 Absolute Maximum Ratings TA = 25C unless otherwise noted 2N7000 2N7002 NDS7002A Symbol Param
2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Field Effect Transistor General Description Features High density cell design for low RDS(ON). These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 400mA DC and can deliver pulsed currents up to 2A. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications. Voltage controlled small signal switch. Rugged and reliable. High saturation current capability. ___________________________________________________________________________________________ D G D G S TO-92 S Absolute Maximum Ratings TA = 25C unless otherwise noted 2N7000 2N7002 NDS7002A Symbol Param
ges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Field Effect Transistor Features Description * * * * These N-channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 400 mA DC and can deliver pulsed currents up to 2 A. These products are particularly suited for low-voltage, low-current applications, such as small servo motor control, power MOSFET gate drivers, and other switching applications. High Density Cell Design for Low RDS(ON) Voltage Controlled Small Signal Switch Rugged and Re
2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Field Effect Transistor General Description Features High density cell design for low RDS(ON). These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 400mA DC and can deliver pulsed currents up to 2A. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications. Voltage controlled small signal switch. Rugged and reliable. High saturation current capability. ___________________________________________________________________________________________ D G D G S TO-92 S 2N7000 (TO-236AB) 2N7002/NDS7002A Absolute Maximum Ratings TA = 25C unless otherwise noted <
2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Field Effect Transistor General Description Features High density cell design for low RDS(ON). These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 400mA DC and can deliver pulsed currents up to 2A. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications. Voltage controlled small signal switch. Rugged and reliable. High saturation current capability. ___________________________________________________________________________________________ D G D G S TO-92 S 2N7000 (TO-236AB) 2N7002/NDS7002A Absolute Maximum Ratings TA = 25C unless otherwise noted <
2N7000BU / 2N7000TA Advanced Small-Signal MOSFET Features Description * * * * * These N-channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products minimize onstate resistance while providing rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 400 mA DC and can deliver pulsed currents up to 2 A. These products are particularly suited for low-voltage, low-current applications, such as small servo motor control, power MOSFET gate drivers, and other switching applications. Fast Switching Times Improved Inductive Ruggedness Lower Input Capacitance Extended Safe Operating Area Improved High-Temperature Reliability TO-92 1 1. Source 2. Gate 3. Drain Ordering Information Part Number Marking Package Packing Method 2N7000BU 2N7000 TO-92 3L Bulk 2N7000TA 2N7000 TO-92 3L Ammo Absolute Maximum Ratings Stresses
2N7000 / 2N7002 / NDS7002A November 1995 N-Channel Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 400mA DC and can deliver pulsed currents up to 2A. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications. Features High density cell design for low Rogon- Voltage controlled small signal switch. Rugged and reliable. High saturation current capability. D G S G D TO-92 2 SOT-23 s Absolute Maximum Ratings T, = 25C unless otherwise noted Symbol Parameter 2N7000 2N7002 NDS7002A Units Voss Drain-Source Voltage 60 Vv Voer Drain-Gate Voltage (Rg,
be connected to R1. If only a higher supply voltage than 5V is available, any monolithic or discrete positive 5V regulator can be used to provide the pullup voltage for the 1-Wire bus. The characteristics of the components are not critical. The transistor 2N7000 has been chosen since it is a very common product and has a low threshold voltage. If desired, a small signal bipolar transistor or any available open-drain or open-collector inverting driver can be used instead of Q1. If Q1 is an npn-transistor, a resistor bypassed by a small capacitor between the TX- input and the base terminal is required to limit the input current. The logic level high at TX will produce a low on the 1-Wire bus. To generate a Write-One or Read Data time slot, a short high pulse (1 s < t < 15 s) must be applied to the TX input. A Write-Zero Time Slot is formed by a 60 s high pulse at TX. Data from iButtons is received in its true form. If idle, TX must be held at a logic low level. The reference pulse train and other r
2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 400mA DC and can deliver pulsed currents up to 2A. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications. High density cell design for low RDS(ON). Voltage controlled small signal switch. Rugged and reliable. High saturation current capability. ___________________________________________________________________________________________ D G S Absolute Maximum Ratings T A = 25C unless otherwise noted 2N7000 2N7002 NDS7002A Symbol Parameter VDSS D
2N7000 2N7002 N-channel 60 V, 1.8 , 0.35 A, SOT23-3L, TO-92 STripFETTM Power MOSFET Features Type VDSS RDS(on) max ID 2N7000 60 V < 5 (@10V) 0.35 A 2N7002 60 V < 5 (@10V) 0.20 A 3 2 1 Low Qg Low threshold drive SOT23-3L TO-92 Application Switching applications Description This Power MOSFET is the second generation of STMicroelectronics unique "single feature size" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. Figure 1. Internal schematic diagram SOT23-3L Table 1. TO-92 Device summary Order codes Marking Package Packaging 2N7000 2N7000G TO-92 Bulk 2N7002 ST2N SOT23-3L Tape and reel November 2008 Rev 9 1/14 www.st.com 14 Contents 2N7000, 2N7002 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electr